IRLML2246TRPBF hexfet power mosfet application(s) micro3 tm (sot-23) IRLML2246TRPBF features and benefits ? system/load switch v ds -20 v v gs max 12 v r ds(on) max (@v gs = -4.5v) 135 m ? r ds(on) max (@v gs = -2.5v) 236 m ? absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ -10v i d @ t a = 70c continuous drain current, v gs @ -10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ? ja junction-to-ambient ??? 100 r ? ja junction-to-ambient (t<10s) ??? 99 max. -2.6 -2.1 -55 to + 150 12 0.01 -20 1.3 0.80 -11 w c/w a features benefits industry-standard pinout multi-vendor compatibility compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendly msl1, consumer qualification increased reliability product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
g d s electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -20 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 9.5 ??? mv/c ??? 90 135 ??? 157 236 v gs(th) gate threshold voltage -0.4 ??? -1.1 v i dss ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 16 ??? ? gfs forward transconductance 3.4 ??? ??? s q g total gate charge ??? 2.9 ??? q gs gate-to-source charge ??? 0.52 ??? q gd gate-to-drain ("miller") charge ??? 1.2 ??? t d(on) turn-on delay time ??? 5.3 ??? t r rise time ??? 7.7 ??? t d(off) turn-off delay time ??? 26 ??? t f fall time ??? 16 ??? c iss input capacitance ??? 220 ??? c oss output capacitance ??? 70 ??? c rss reverse transfer capacitance ??? 48 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 17 26 ns q rr reverse recovery charge ??? 6.2 9.3 nc ??? ??? ??? ??? pf a -1.3 -11 v dd =-10v na nc ns v ds = v gs , i d = -10 a v ds = -16v, v gs = 0v v ds = -16v, v gs = 0v, t j = 125c r ds(on) v gs = -2.5v, i d = -2.1a static drain-to-source on-resistance drain-to-source leakage current a m ? conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -2.6a mosfet symbol showing the v ds =-10v conditions v gs = -4.5v v gs = 0v v ds = -16v ? = 1.0khz r g = 6.8 ? v gs = -4.5v di/dt = 100a/ s v gs = 12v v gs = -12v t j = 25c, i s = -2.6a, v gs = 0v integral reverse p-n junction diode. v ds = -10v, i d = -2.6a i d = -2.6a i d = -1.0a t j = 25c, v r = -15v, i f =-2.6a IRLML2246TRPBF product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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